(China (Mainland))
Product Summary
The HY628400ALG-70 is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400ALG-70 uses Hynix’s high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. The HY628400ALG-70 is particularly well suited for use in high-density and low power system applications. The HY628400ALG-70 has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V.
Parametrics
HY628400ALG-70 absolute maximum ratings: (1)Power Supply, Input/Output Voltage/ Vcc, VIN, VOUT: -0.5 to 7.0V; (2)Operating Temperature, TA: 0 to 70℃; (3)Storage Temperature, TSTG: -65 to 150℃; (4)Power Dissipation, PD: 1.0W; (5)Data Output Current, IOUT: 50MA; (6)Lead Soldering Temperature & Time, TSOLDER: 260 ·10℃·sec.
Features
HY628400ALG-70 features: (1)Fully static operation and Tri-state outputs; (2)TTL compatible inputs and outputs; (3)Low power consumption; (4)Battery backup(L/LL-part); (5)Standard pin configuration; (6)32pin 525mil SOP.
Diagrams
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