Product Summary

K9F2G08R0A - FLASH MEMORY - Samsung semiconductor

 

Features

Voltage Supply
  - 1.65V ~ 1.95V
  - 2.70V ~ 3.60V
? Organization
  - Memory Cell Array : (256M + 8M) x 8bit
  - Data Register :  (2K + 64) x 8bit
? Automatic Program and Erase
  - Page Program :  (2K + 64)Byte
  - Block Erase :  (128K + 4K)Byte
? Page Read Operation
  - Page Size :  (2K + 64)Byte
  - Random Read : 25μs(Max.)
  - Serial  Access : 25ns(Min.) 
(*K9F2G08R0A: tRC = 42ns(Min))
                              
256M x 8 Bit NAND Flash Memory
? Fast Write Cycle Time
  - Page Program time : 200μs(Typ.)
  - Block Erase Time : 1.5ms(Typ.)
? Command/Address/Data Multiplexed I/O Port
? Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
? Reliable CMOS Floating-Gate Technology
  -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte
ECC)
  - Data Retention : 10 Years
? Command Driven Operation
? Intelligent Copy-Back with internal 1bit/528Byte EDC
? Unique ID for Copyright Protection
? Package :
  - K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE
    63 - Ball  FBGA I (10 x 13 / 0.8 mm pitch)
  - K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE
    48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
   - K9F2G08U0A-ICB0/IIB0
      52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

Diagrams