Product Summary

The 2SK3878 is a Field Effect Transistor. It is suitable for Switching Regulator Applications.

Parametrics

2SK3878 absolute maximum ratings: (1)Drain-source voltage, VDSS: 900 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: 900 V; (3)Gate-source voltage, VGSS: ±30 V; (4)Drain current, DC, ID: 9 A; Pulse, IDP: 27 A; (5)Drain power dissipation (Tc = 25℃), PD: 150 W; (6)Single pulse avalanche energy, EAS: 778 mJ; (7)Avalanche current, IAR: 9 A; (8)Repetitive avalanche energy, EAR: 15 mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55~150℃.

Features

2SK3878 features: (1)Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.); (2)High forward transfer admittance: |Yfs| = 7.0 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 720 V); (4)Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).

Diagrams

2SK3878 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SK3878(F)
2SK3878(F)

MOSFET N-CH 900V 9A TO-3PN
Data Sheet
0-100: $1.73
2SK3878(F,T)
2SK3878(F,T)
Toshiba
MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 720V
Data Sheet
0-1: $3.29
1-10: $2.77
10-100: $2.37
100-250: $2.24