(China (Mainland))
Product Summary
The SUP75P05-08 is a P-channel 55V (D-S) MOSFET in TO-220-3 package.
Parametrics
SUP75P05-08 absolute maximum ratings: (1)Drain-Source Voltage, VDS: -55V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current(Tj=175℃), ID: -75A; (4)Continuous Drain Current(Tj=25℃), ID: -47A; (5)Pulsed Drain Current, IDM: -240A; (6)Avalanche Current, IAR: -75A; (7)Repetitive Avalanche Energy, L = 0.1 mH, EAR: 280mJ; (8)Power Dissipation, TC = 25℃ (TO-220AB and TO-263), PD: 250W; (9)Power Dissipation, TA = 125℃ (TO-263), , PD: 3.7W; (10)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 175W.
Features
SUP75P05-08 characteristics: (1)Continuous Current, Is: 75A; (2)Pulsed Current, ISM: 240A; (3)Forward Voltage, VSD: –1.1 to –1.3V; (4)Reverse Recovery Time, trr: 60 TO 120ns; (5)Peak Reverse Recovery Current, IRM(REC): 2.2 TO 3.5A; (6)Reverse Recovery Charge, Qrr: 0.176 to 0.21℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SUP75P05-08 |
Vishay/Siliconix |
MOSFET 55V 75A 250W |
Data Sheet |
Negotiable |
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SUP75P05-08-E3 |
Vishay/Siliconix |
MOSFET 55V 75A 250W |
Data Sheet |
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