(China (Mainland))
Product Summary
The RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. It is suitable for output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
Parametrics
RD01MUS1 absolute maximum ratings: (1)VDSS, Drain to source voltage: 30 V; (2)VGSS, Gate to source voltage: +/-10 V; (3)Pch, Channel dissipation: 3.6 W; (4)Pin, Input Power: 60 mW; (5)ID, Drain Current: 600 mA; (6)Tch, Channel Temperature: 150℃; (7)Tstg, Storage temperature: -40 to +125℃; (8)Rth j-c, Thermal resistance: 34.5℃/W.
Features
RD01MUS1 features: (1)High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz; (2)High Efficiency: 65%typ.
Diagrams
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 RD01MUS1 |
Other |
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Data Sheet |
Negotiable |
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RD0106T-H |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) FRD 1A 600V |
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RD0106T-TL-H |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) FRD 1A 600V |
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RD01MUS1 |
Other |
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Data Sheet |
Negotiable |
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RD01MUS2 |
Other |
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Data Sheet |
Negotiable |
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