(China (Mainland))
Product Summary
The BSP171P is a SIPMOS power transistor
Parametrics
BSP171P absolute maximum ratings: (1)Continuous drain current: TA = 25 °C -1.8A; TA = 100 °C -1.15A; (2)Pulsed drain current TA = 25 °C: -7.2A; (3)Avalanche energy, single pulse ID = -1.8 A, VDD = -25 V, RGS = 25 W: 70mJ; (4)Avalanche current,periodic limited by IAR: -1.8 A; (5)Reverse diode dv/dt IS = -1.8 A, VDD ≦V(BR)DSS, di/dt = 100 A/μs, Tjmax = 150 °C : 6 KV/μs; (6)Gate source voltage: ±14V; (7)Power dissipation, TA = 25 °C : 1.8 W; (8)Operating temperature : -55 ...+150 °C; (9)Storage temperature : -55 ...+150°C; (10)IEC climatic category; DIN IEC 68-1: 55/150/56.
Features
BSP171P features: (1)P-Channel; (2)Enhancement mode; (3)Avalanche rated; (4) Logic Level; (5)dv/dt rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BSP171P |
Other |
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Data Sheet |
Negotiable |
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BSP171P L6327 |
Infineon Technologies |
MOSFET SIPMOS Sm-Signal TRANSISTOR |
Data Sheet |
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BSP171PE6327 |
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MOSFET P-CH 60V 1.9A SOT223 |
Data Sheet |
Negotiable |
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BSP171PE6327T |
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MOSFET P-CH 60V 1.9A SOT223 |
Data Sheet |
Negotiable |
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