(China (Mainland))
Product Summary
The BTS5235-2L is a dual channel high-side power switch in PG-DSO-12-9 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The BTS5235-2L is monolithically integrated in Smart SIPMOS technology.
Parametrics
BTS5235-2L absolute maximum ratings: (1)Operating voltage, Vbb(on): 4.5 to 28V; (2)Over voltage protection, Vbb(AZ): 41V; (3)On-State resistance, RDS(ON): 60mΩ; (4)Nominal load current (one channel active), IL(nom): 3.5A; (5)Current limitation, IL(LIM): 23A; (6)Current limitation repetitive, IL(SCr): 6A; (7)Standby current for whole device with load, Ibb(OFF): 2.5μA.
Features
BTS5235-2L features: (1)Very low standby current; (2)3.3 V and 5 V compatible logic pins; (3)Improved electromagnetic compatibility (EMC); (4)Stable behavior at under voltage; (5)Logic ground independent from load ground; (6)Secure load turn-off while logic ground disconnected; (7)Optimized inverse current capability; (8)Green Product (RoHS compliant); (9)AEC Qualified.
Diagrams
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 BTS5235-2L |
Infineon Technologies |
Power Switch ICs - Power Distribution IC POWER SWITCH HIGH SIDE 2.6/3.5A |
Data Sheet |
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