(China (Mainland))
Product Summary
The FGH40N60SFDTU is a Field Stop IGBT using Novel Field Stop IGBT Technology. It offers the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Parametrics
FGH40N60SFDTU absolute maximum ratings: (1)VCES, Collector to Emitter Voltage: 600 V; (2)VGES, Gate to Emitter Voltage: ± 20 V; (3)IC: Collector Current @ TC = 25℃: 80 A; Collector Current @ TC = 100℃: 40 A; (4)ICM, Pulsed Collector Current @ TC = 25℃: 120 A; (5)PD: Maximum Power Dissipation @ TC = 25℃: 290 W; Maximum Power Dissipation @ TC = 100℃: 116 W; (6)TJ, Operating Junction Temperature: -55 to +150 ℃; (7)Tstg, Storage Temperature Range: -55 to +150 ℃; (8)TL, Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds: 300 ℃.
Features
FGH40N60SFDTU features: (1)High current capability; (2)Low saturation voltage: VCE(sat) =2.3V @ IC = 40A; (3)High input impedance; (4)Fast switching; (5)RoHS compliant.
Diagrams
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 FGH40N60SFDTU |
Fairchild Semiconductor |
IGBT Transistors 600V 40A Field Stop |
Data Sheet |
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FGH40N60SFDTU |
Fairchild Semiconductor |
IGBT Transistors 600V 40A Field Stop |
Data Sheet |
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