(China (Mainland))
Product Summary
The 2SK4108 is a silicon n-channel mos type switching regulator.
Parametrics
2SK4108 absolute maximum ratings: (1)Drain-source voltage VDSS: 500 V; (2)Drain-gate voltage (RGS = 20 kΩ) VDGR: 500 V; (3)Gate-source voltage VGSS: ±30 V; (4)Drain current DC ID: 20 A; (5)Drain current Pulse IDP: 80 A; (6)Drain power dissipation (Tc = 25°C) PD: 150 W; (7)Single-pulse avalanche energy EAS: 960 mJ; (8)Avalanche current IAR: 20 A; (9)Repetitive avalanche energy (Note 3) EAR: 15 mJ; (10)Channel temperature Tch: 150 °C; (11)Storage temperature range Tstg: 55~150 °C.
Features
2SK4108 features: (1)Low drain.source ON resistance : RDS (ON) = 0. 21Ω (typ.); (2)High forward transfer admittance : |Yfs| = 14 S (typ.); (3)Low leakage current : IDSS = 100 μA (max) (VDS = 500 V); (4)Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SK4108 |
Other |
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Data Sheet |
Negotiable |
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2SK4108(F,T) |
Toshiba |
MOSFET N-Ch FET VDSS 500V RDS 0.21 Ohm Yfs 14S |
Data Sheet |
Negotiable |
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