Product Summary

The IRF3205LPBF is a Power MOSFET. It utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRF3205LPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF3205LPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 110A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 80 A; (3)IDM ,Pulsed Drain Current: 390A; (4)PD @TC = 25℃, Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)IAR, Avalanche Current: 62 A; (8)EAR, Repetitive Avalanche Energy: 20 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m).

Features

IRF3205LPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.

Diagrams

IRF3205LPBF block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF3205LPBF
IRF3205LPBF
International Rectifier
MOSFET MOSFT 55V 110A 8mOhm 97.3nC
Data Sheet
0-1: $1.91
1-25: $1.24
25-100: $0.89
100-250: $0.83
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF3 10 10%TR
IRF3 10 10%TR
Vishay/Dale
Power Inductors 10uH 10%
Data Sheet
Negotiable 
IRF3 5.6 10%TR
IRF3 5.6 10%TR
Vishay/Dale
Power Inductors 5.6uH 10%
Data Sheet
0-1: $0.30
1-2000: $0.15
2000-4000: $0.14
4000-10000: $0.14
IRF300
IRF300
Other

Data Sheet
Negotiable 
IRF3000
IRF3000

MOSFET N-CH 300V 1.6A 8-SOIC
Data Sheet
Negotiable 
IRF3000PBF
IRF3000PBF

MOSFET N-CH 300V 1.6A 8-SOIC
Data Sheet
Negotiable 
IRF3007
IRF3007
Other

Data Sheet
Negotiable