L6569AD013TR

Product Summary

HIGH VOLTAGE RAIL UP TO 600V
■ BCD OFF LINE TECHNOLOGY
■ INTERNAL BOOTSTRAP DIODE
STRUCTURE
■ 15.6V ZENER CLAMP ON VS
■ DRIVER CURRENT CAPABILITY:
- SINK CURRENT = 270mA
- SOURCE CURRENT = 170mA
■ VERY LOW START UP CURRENT: 150μA
■ UNDER VOLTAGE LOCKOUT WITH
HYSTERESIS
■ PROGRAMMABLE OSCILLATOR
FREQUENCY
■ DEAD TIME 1.25μs
■ dV/dt IMMUNITY UP TO ±50V/ns
■ ESD PROTECTION

DESCRIPTION
The device is a high voltage half bridge driver with
built in oscillator. The frequency of the oscillator can
be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be
driven also by external logic signal.
The output drivers are designed to drive external nchannel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25μs] to avoid crossconduction of the power devices.
Two version are available: L6569 and L6569A. They
differ in the low voltage gate driver start up sequence

 

Parametrics

ABSOLUTE MAXIMUM RATINGS
(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low impedance power source.
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
THERMAL DATA
RECOMMENDED OPERATING CONDITIONS
PIN CONNECTION
Symbol Parameter Value Unit
IS (*) Supply Current 25 mA
VCF Oscillator Resistor Voltage 18 V
VLVG Low Side Switch Gate Output 14.6 V
VOUT High Side Switch Source Output -1 to VBOOT - 18 V
VHVG High Side Switch Gate Output -1 to VBOOT V
VBOOT Floating Supply Voltage 618 V
VBOOT/OUT Floating Supply vs OUT Voltage 18 V
dVBOOT/dt VBOOT Slew Rate (Repetitive) ± 50 V/ns
dVOUT/dt VOUT Slew Rate (Repetitive) ± 50 V/ns
Tstg Storage Temperature -40 to 150 °C
Tj Junction Temperature -40 to 150 °C
Tamb Ambient Temperature (Operative) -40 to 125 °C
Symbol Parameter Minidip SO8 Unit
Rth j-amb Thermal Resistance Junction-Ambient Max 100 150 °C/W
Symbol Parameter Min. Max. Unit
VS Supply Voltage 10 VCL V
VBOOT Floating Supply Voltage - 500 V
VOUT High Side Switch Source Output -1

Features

N FUNCTION
ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25°C; unless otherwise specified.)
N° Pin Description
1 VS Supply input voltage with internal clamp [typ. 15.6V]
2 RF Oscillator timing resistor pin.
A buffer set alternatively to VS and GND can provide current to the external resistor RF
connected between pin 2 and 3.
Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569 to drive
a full H-bridge)
3 CF Oscillator timing capacitor pin.
A capacitor connected between this pin and GND fixes (together with RF) the oscillating
frequency
Alternatively an external logic signal can be applied to the pin to drive the IC.
4 GND Ground
5 LVG Low side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
6 OUT Upper driver floating reference
7 HVG High side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
8 BOOT Bootstrap voltage supply.
It is the upper driver floating supply. The bootstrap capacitor connected between this pin and pin
6 can be fed by an internal structure named “bootstrap driver” (a pate

Diagrams