SPD04N60C3

Cool MOS Power Transistor

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Price:: US $0.40~0.45 / piece [Get Latest Price]

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PartNumber:: SPD04N60C3

Brand:: Infineon Technologies - Infineon | Pack: SMD | D/C: 09+

Availability:: Supply Ability: 7500/Year Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-07-04

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Part Number:SPD04N60C3
US $0.40 - 0.45
Quantity:

piece

Product Summary

Cool MOS? Power Transistor
VDS @ Tjmax
650 V
RDS(on)
0.95 ?
ID 4.5 A
Feature
? New revolutionary high voltage technology
? Ultra low gate charge
? Periodic avalanche rated
? Extreme dv/dt rated
? High peak current capability
? Improved transconductance

Parametrics

Type Package Ordering Code
SPD04N60C3 P-TO252 Q67040-S4412
SPU04N60C3 P-TO251 -

Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 4.5 A, Tj
= 125 °C
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC
- - 2.5 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 75
SMD version, device on PCB:
@ min. footprint
@ 6 cm2
cooling area 2)
RthJA
-
-
-
-
75
50
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Tsold
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS
VGS=0V, ID=4.5A - 700 -
Gate threshold voltage VGS(th)
ID=200μΑ, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
Tj
=25°C,
Tj
=150°C
-
-
0.5
-
1
50
μA
Gate-source leakage current IGSS
VGS=30V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on)
VGS=10V, ID=2.8A,
Tj
=25°C
Tj=150°C
-
-
0.85
2.3
0.95
-

Features

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
4.5
2.8
A
Pulsed drain current, tp
limited by Tjmax
ID puls
13.5
Avalanche energy, single pulse
ID = 3.4 A, VDD = 50 V
EAS
130 mJ
Avalanche energy, repetitive tAR limited by Tjmax
1)
ID = 4.5 A, VDD = 50 V
EAR 0.4
Avalanche current, repetitive tAR limited by Tjmax
IAR
4.5 A
Gate source voltage static VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot
50 W
Operating and storage temperature Tj
, Tstg
-55... +150 °C

Diagrams

ical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1
0.039 K/W
Rth2
0.074
Rth3
0.132
Rth4
0.555
Rth5
0.529
Rth6
0.169
Thermal capacitance
Cth1
0.00007347 Ws/K
Cth2
0.0002831
Cth3
0.0004062
Cth4
0.001215
Cth5
0.00276
Cth6
0.029
External Heatsink