SST29EE020-90-4C-NH

2 Mbit (256K x8) Page-Mode EEPROM, 32-lead PLCC, Single Voltage Read, Write Operations

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Price:: US $1.00~3.00 / piece [Get Latest Price]

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PartNumber:: SST29EE020-90-4C-NH

Brand:: Silicon Storage Technology, Inc - SST | Pack: PLCC | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-08-04

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Part Number:SST29EE020-90-4C-NH
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Product Summary

The SST29EE020-90-4C-NH is a 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE020-90-4C-NH writes with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE020-90-4C-NH conforms to JEDEC standard pinouts for byte-wide memories.

Parametrics

SST29EE020-90-4C-NH absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -1.0V to VDD + 1.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 14.0V; (6)Package Power Dissipation Capability (Ta = 25℃): 1.0W; (7)Through Hold Lead Soldering Temperature (10 Seconds): 300℃; (8)Surface Mount Lead Soldering Temperature (3 Seconds): 240℃; (9)Output Short Circuit Current: 100mA.

Features

SST29EE020-90-4C-NH features: (1)Single Voltage Read and Write Operations; (2)Superior Reliability; (3)Low Power Consumption; (4)Fast Page-Write Operation; (5)Fast Read Access Time; (6)Latched Address and Data; (7)Automatic Write Timing; (8)End of Write Detection; (9)Hardware and Software Data Protection; (10)Product Identification can be accessed via Software Operation; (11)TTL I/O Compatibility; (12)JEDEC Standard; (13)Packages Available, 32-lead PLCC.